Multi-Channel Field Effect Transistors Using 2D-Material

ABSTRACT

A device includes a semiconductor substrate, a buried oxide over the substrate, a first transition metal dichalcogenide layer over the buried oxide, an insulator over the first transition metal dichalcogenide layer, and a second transition metal dichalcogenide layer over the insulator. A gate dielectric is over the second transition metal dichalcogenide layer, and a gate is over the gate dielectric.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment, as examples. Semiconductor devices are typicallyfabricated by sequentially depositing insulating or dielectric layers,conductive layers, and semiconductive layers of material over asemiconductor substrate, and patterning the various material layersusing lithography to form circuit components and elements thereon.

Transistors are circuit components or elements that are often formed onsemiconductor devices. Many transistors may be formed on a semiconductordevice in addition to capacitors, inductors, resistors, diodes,conductive lines, or other elements, depending on the circuit design. Afield effect transistor (FET) is one type of transistor.

Generally, a transistor includes a gate stack formed between source anddrain regions. The source and drain regions may include a doped regionof a substrate and may exhibit a doping profile suitable for aparticular application. The gate stack is positioned over the channelregion and may include a gate dielectric interposed between a gateelectrode and the channel region in the substrate.

In recent development of the FETs, Transition Metal Dichalcogenide (TMD)materials are used for forming the FETs.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1 through 13A, 13B, 14A, and 14B illustrate the cross-sectionalviews of intermediate stages in the formation of a Field EffectTransistor (FET) incorporating Two-Dimension (2D) Transition MetalDichalcogenides (TMD) in accordance with some embodiments;

FIG. 15 illustrates a mono-layer of TMD in accordance with someembodiments;

FIG. 16 illustrates a cross-sectional view of a 2D TMD FET in accordancewith alternative embodiments; and

FIG. 17 illustrates a process flow for forming a 2D TMD FET inaccordance with alternative embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “underlying,” “below,”“lower,” “overlying,” “upper” and the like, may be used herein for easeof description to describe one element or feature's relationship toanother element(s) or feature(s) as illustrated in the figures. Thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. The apparatus may be otherwiseoriented (rotated 90 degrees or at other orientations) and the spatiallyrelative descriptors used herein may likewise be interpretedaccordingly.

A Field Effect Transistor (FET) incorporating Two-Dimension (2D)Transition Metal Dichalcogenide (TMD) and the method of forming the sameare provided in accordance with various exemplary embodiments. Theintermediate stages of forming the 2D TMD FET are illustrated. Thevariations of the embodiments are discussed. Throughout the variousviews and illustrative embodiments, like reference numbers are used todesignate like elements.

FIGS. 1 through 13A, 13B, 14A, and 14B illustrate the cross-sectionalviews of intermediate stages in the formation of a 2D TMD FET inaccordance with some embodiments. The steps shown in FIGS. 1 through13A, 13B, 14A, and 14B are also illustrated schematically in the processflow 200 shown in FIG. 17. In the subsequent discussion, the processsteps shown in FIGS. 1 through 13A, 13B, 14A, and 14B are discussedreferring to the process steps in FIG. 17.

Referring first to FIG. 1, a portion of substrate 20 is shown having afirst dielectric layer 22 formed thereon. Substrate 20 may be formed ofsilicon, although it may also be formed of other group IIIA, group IVA,and/or group VA elements such as germanium, gallium, arsenic, orcombinations thereof. Substrate 20 may also be a Silicon-On-Insulator(SOI) substrate. In the embodiments in which substrate 20 has an SOIstructure, substrate 20 comprises a layer of a semiconductor material(such as silicon, germanium and/or the like) formed on an insulatorlayer (not shown). The insulator layer may be, for example, a buriedoxide (BOX) layer or a silicon oxide layer. The use of the semiconductorsubstrate makes the process for forming the 2D TMD FETs compatible withforming other Metal-Oxide-Semiconductor (MOS) transistors in the samechip. In accordance with alternative embodiments of the presentdisclosure, substrate 20 is a dielectric substrate such as a glasssubstrate, an aluminum oxide substrate, a silicon oxide substrate, orthe like.

In the embodiments in which substrate 20 is a semiconductor substrate,insulation layer 22 is formed over substrate 20 to electrically insulatethe overlying structure from substrate 20. In accordance with someembodiments of the present disclosure, insulation layer 22 is formed ofa dielectric material, which is selected from materials including, andnot limited to, an oxide such as silicon oxide, a nitride such assilicon nitride, an oxynitride such as silicon oxynitride, and a carbidesuch as silicon carbide. In these embodiments, insulation layer 22 formsan insulator (a buried oxide layer, for example) that is formed on asemiconductor (such as silicon) substrate. In the embodiments in whichsubstrate 20 is a silicon substrate, insulation layer 22 may be formedthrough thermally oxidizing silicon substrate 20 to generate siliconoxide as a surface layer. In alternative embodiments, insulation layer22 is formed using a deposition method such as Chemical Vapor Deposition(CVD), Plasma Enhance Chemical Vapor Deposition (PECVD), or the like.

Again referring to FIG. 1, conductive layer 24A is formed overinsulation layer 22. The respective step is shown as step 202 in theprocess flow shown in FIG. 17. In accordance with some embodiments,conductive layer 24A comprises a metal such as nickel (Ni), palladium(Pd), scandium (Sc), titanium (Ti), or alloys thereof. In alternativeembodiments, conductive layer 24A is formed using other conductivematerials selected from, and not limited to, polysilicon, metalsilicide, metal nitride, or the like. Conductive layer 24A may be formedusing Physical Vapor Deposition (PVD), Atomic Layer Deposition (ALD), orother applicable materials. After the formation, conductive layer 24A ispatterned, as shown in FIG. 1. Throughout the description, conductivelayer 24A is also referred to as a bottom gate.

Next, referring to FIG. 2, dielectric layer 26A is formed on theopposite sides of bottom gate 24A. In accordance with some embodiments,when viewed in the top view, dielectric layer 26A may fully encirclebottom gate 24A. Dielectric layer 26A may also be formed of a dielectricmaterial such as a nitride, an oxynitride, a carbide, or the like. Thetop surface of dielectric layer 26A is coplanar with the top surface ofbottom gate 24A in some embodiments. The formation of dielectric layer26A may include depositing a blanket dielectric layer using a CVDmethod, spin on, or the like, and then performing a Chemical MechanicalPolish (CMP) to level the top surface of bottom gate 24A with the topsurface of dielectric layer 26A.

Next, referring to FIG. 3, gate dielectric 28A is formed over bottomgate 24A and dielectric layer 26A. The respective step is shown as step204 in the process flow shown in FIG. 17. In accordance with someembodiments of the present disclosure, gate dielectric 28A comprises ahigh-k dielectric material selected from HfO₂, HfSiO_(x), HfZrO_(x),Al₂O₃, TiO₂, LaO_(x), BaSrTiO_(x) (BST), PbZr_(x)Ti_(y)O_(z) (PZT),multi-layers thereof, and/or combinations thereof. The formation methodincludes CVD, PECVD, ALD, and the like. In alternative embodiments, gatedielectric 28A is formed of other dielectric materials such as siliconoxide, silicon nitride, or the like. The Effective Oxide Thickness (EOT)of gate dielectric 28A is small, and may be smaller than about 2 nm or 1nm in accordance with some embodiments. In some exemplary embodiments,the EOT of gate dielectric 28A is about 0.6 nm. The reduction of the EOTmay be achieved by forming gate dielectric 28A as a high-k dielectricmaterial, whose EOT is equal to the thickness T1 of gate dielectric 28Adivided by the k value of gate dielectric 28A, and multiplied by the kvalue of silicon oxide (about 3.8). In some exemplary embodiments,thickness T1 is in the range between about 1 nm and about 15 nm.

Referring to FIG. 4, TMD layer 30A is formed. The respective step isshown as step 206 in the process flow shown in FIG. 17. In accordancewith some embodiments of the present disclosure, TMD layer 30A comprisesthe compound of a transition metal and a group VIA element. Thetransition metal may include tungsten (W), molybdenum (Mo), Ti, or thelike. The group VIA element may be sulfur (S), selenium (Se), tellurium(Te), or the like. For example, TMD layer 30 may include MoS₂, MoSe₂,WS₂, WSe₂, or the like.

TMD layer 30A may be a mono-layer or a few-layer. FIG. 15 illustrates amono-layer of TDM in accordance with some exemplary embodiments. In FIG.15, the transition metal atoms 120 form a layer in the middle, and thegroup VIA atoms 122 form a first layer over the layer of atoms 120, anda second layer underlying the layer of atoms 120. Atoms 120 may be Watoms, Mo atoms, or Ti atoms, and atoms 122 may be S atoms, Se atoms, orTe atoms. In the illustrated exemplary embodiments, each of atoms 120 isbonded to four atoms 122, and each of atoms 122 is bonded to two atoms120. Throughout the description, the illustrated cross-bonded layersincluding one layer of atoms 120 and two layers of atoms 122 incombination are referred to as a mono-layer 124 of TMD.

Referring back to FIG. 4, in accordance with some embodiments of thepresent disclosure, TMD layer 30A has a crystalline structure with asingle mono-layer 124 (FIG. 15). In accordance with alternativeembodiments of the present disclosure, TMD layer 30A has several layersof mono-layer 124, and hence is referred to as having a few-layerstructure. In the few-layer structure, there are several mono-layers 124(FIG. 15) stacked. In accordance with some embodiments, the total countof mono-layer 124 in the few-layer is small in order to improve the gatecontrol of the resulting 2D TMD FET, wherein the gate control reflectsthe ability of the gate(s) controlling the channel of the resulting FET.The total count of mono-layers 124 in the few-layer may be smaller thanabout 5 in some exemplary embodiments. In alternative embodiments, thetotal count may be greater than 5. Thickness T2 of TMD layer 30A may bein the range between about 0.5 nm and about 5 in some exemplaryembodiments.

TMD layer 30A may be formed using CVD, with MoO₃ and S as process gasesand N₂ as carrier gas. In alternative embodiments PECVD, or anotherapplicable method is used. The formation temperature may be betweenabout 600° C. and about 700° C. in some exemplary embodiments, andhigher or lower temperatures may be used. The process conditions arecontrolled to achieve the desirable total count of mono-layers.

Next, as shown in FIG. 5, insulator 32A is formed over TMD layer 30A.The respective step is shown as step 208 in the process flow shown inFIG. 17. Insulator 32A is a dielectric layer having a low EOT. Inaccordance with some embodiments, insulator 32A is formed of a high-kdielectric material selected from HfO₂, HfSiO_(x), HfZrO_(x), Al₂O₃,TiO₂, LaO_(x), BaSrTiO_(x), PbZr_(x)Ti_(y)O_(z), or the like. The EOT ofinsulator 32A is desirably as small as possible in some exemplaryembodiments, providing insulator 32A can provide effective insulationbetween TMD layer 30A and the overlying TMD layer 30C (FIG. 6). Thereason for a low EOT is that the increase in the EOT of insulator 32Amay result in the adverse increase in the sub-threshold swing of theresulting 2D TMD FET. For example, if the EOT is increased from about0.5 nm to about 9.5 nm, the sub-threshold swing may increase from about65 to about 69, as revealed by some experiment results. In accordancewith some embodiments, the EOT of insulator 32A is smaller than about 2nm, and may be smaller than about 1 nm. Thickness T3 of insulator 32Amay be in the range between about 1 nm and about 15 nm.

Next, referring to FIG. 6, TMD layer 30C is formed. The respective stepis shown as step 210 in the process flow shown in FIG. 17. In accordancewith some embodiments of the present disclosure, TMD layer 30C is asingle-mono-layer that includes only a single mono-layer 124 (FIG. 15).In alternative embodiments, TMD layer 30C has a few-layer structureincludes several mono-layers 124, wherein the total count of themono-layers 124 in TMD layer 30C may be lower than 5, for example,although a greater total count may be used. TMD layer 30C may be formedusing a method selected from the same candidate methods for forming TMDlayer 30A. For example, TMD layer 30C may be formed using CVD.

TMD layer 30C may include same elements as TMD layer 30A in accordancewith some embodiments. For example, TMD layer 30A and TMD layer 30C mayboth be formed of MoSe₂. In alternative embodiments, TMD layer 30Cincludes elements that are different from the elements in TMD layer 30A.For example, TMD layer 30A may be formed of WSe₂, while TMD layer 30Cmay be formed of MoSe₂. The thickness of TMD layer 30C may be in therange between about 0.5 nm and about 5 nm in some exemplary embodiments.

Next, referring to FIG. 7, insulator 32B is formed over TMD layer 30C.The respective step is shown as step 212 in the process flow shown inFIG. 17. Insulator 32B is also a dielectric layer having a low EOT. Inaccordance with some embodiments, insulator 32B is formed of a high-kdielectric material selected from HfO₂, HfSiO_(x), HfZrO_(x), Al₂O₃,TiO₂, LaO_(x), BaSrTiO_(x), PbZr_(x)Ti_(y)O_(z), or the like. The EOT ofinsulator 32B may be as small as possible, providing it can provideeffective insulation between TMD layer 30C and the overlying TMD layer30B (FIG. 8). In accordance with some embodiments, the EOT of insulator32B is smaller than about 2 nm, and may be smaller than about 1 nm.

FIG. 8 illustrates the formation of TMD layer 30B over insulator 32B,and gate dielectric 28B over TMD layer 30B. The respective steps areshown as steps 214 and 216 in the process flow shown in FIG. 17. Inaccordance with some embodiments of the present disclosure, TMD layer30B is a single-mono-layer that includes only a single mono-layer 124(FIG. 15). In alternative embodiments, TMD layer 30B has a few-layerstructure includes several mono-layers 124, wherein the total count ofthe mono-layers 124 in TMD layer 30B may be lower than 5, for example,although a greater total count may be used. TMD layer 30B may be formedusing a method selected from the same candidate methods for forming TMDlayers 30A and 30C. For example, TMD layer 30B may be formed using CVD.

TMD layer 30B may include the same elements as either one or both of TMDlayers 30A and 30C in accordance with some embodiments. In alternativeembodiments, TMD layer 30C includes elements that are different from theelements in TMD layers 30A and/or 30C. The thickness of TMD layer 30Bmay be in the range between about 0.5 nm and about 5 nm in someexemplary embodiments. Gate dielectric 28B is similar to gate dielectric28A, and hence its formation details and materials are not discussed indetail herein.

When the resulting 2D TMD FET 50 (FIGS. 14A and 14B) is a p-type FETdevice, TMD layers 30A, 30B, and 30C are doped as n-type by doping, forexample, potassium (K), wherein the doping may be performed after theformation of each of TMD layers 30A, 30B, and 30C. When the resulting 2DTMD FET 50 (FIGS. 14A and 14B) is an n-type FET device, TMD layers 30A,30B, and 30C may be doped as p-type by doping, for example, NO₂, whereinthe doping may be performed after the formation of each of TMD layers30A, 30B, and 30C.

Next, referring to FIG. 9, conductive layer 24B (referred to as top gate24B hereinafter) and dielectric layer 26B are formed. The respectivestep is shown as step 218 in the process flow shown in FIG. 17. Thematerials and the formation methods of top gate 24B and dielectric layer26B are similar to that of bottom gate 24A and dielectric layer 26A,respectively. For example, top gate 24B may be a metal-containing layerincluding Ni, Pd, Sc, Ti, or other metals, or may be formed using otherconductive materials such as polysilicon, metal silicide, metal nitride,or the like. The formation method includes PVD, ALD, or other applicablematerials.

Dielectric layer 26B is formed on the opposite sides of top gate 24B. Inaccordance with some embodiments, when viewed in the top view,dielectric layer 26B fully encircles top gate 24B. Dielectric layer 26Bmay also be formed of a dielectric material such as a nitride, anoxynitride, a carbide, or the like. The top surface of dielectric layer26B is coplanar with the top surface of top gate 24B in someembodiments.

FIG. 10 illustrates the patterning of the stacked layers 26A, 28A, 30A,32A, 30C, 32B, 30B, 28B, and 26B in accordance with some embodiments, sothat openings 34 are formed on the opposite sides of the stackedstructure. The respective step is shown as step 220 in the process flowshown in FIG. 17. TMD layers 30A, 30B, and 30C have opposite edgesexposed to openings 34. The patterning may be performed until insulationlayer 22 is exposed. Alternatively, the patterning may be stopped whendielectric layer 26A is exposed, but not etched through.

Referring to FIG. 11, source and drain regions (referred to assource/drain regions hereinafter) 36 are formed in openings 34 (FIG.10). The respective step is also shown as step 220 in the process flowshown in FIG. 17. In accordance with some embodiments, source/drainregions 36 are formed of a conductive material selected from Pd, silver(Ag), Ni, gold (Au), Ti, gadolinium (Gd), or alloys thereof. Theformation may include filling a respective conductive material intoopenings 34, and then performing a CMP to remove excess portions of theconductive material over top gate 24B and dielectric layer 26B.

FIG. 12 illustrates the further patterning of the stack layers to exposebottom gate 24A. The respective step is shown as step 222 in the processflow shown in FIG. 17. The structure shown in FIG. 12 is obtained fromthe plane containing line 12-12 in FIG. 11. Accordingly, no source/drainregions are shown in the illustrated plane. In the patterning step,layers 28A, 30A, 32A, 30C, 32B, 30B, 28B, and 24B are etched, and bottomgate 24A is exposed through the resulting opening 38.

FIGS. 13A and 13B illustrate the formation of contact etch stop layer 40and Inter-Layer Dielectric (ILD) 42 over contact etch stop layer 40. Therespective step is shown as step 224 in the process flow shown in FIG.17. FIG. 13A is obtained from the plane same as the plane of FIG. 11,and FIG. 13B is obtained from the plane same as the plane of FIG. 12.Contact etch stop layer 40 may comprise silicon carbide, siliconnitride, silicon oxynitride, silicon carbo-nitride, or multi-layersthereof. Furthermore, contact etch stop layer 40 is formed of a materialthat has a high etching selectivity relative to the overlying ILD 42,and hence contact etch stop layer 40 may be used to stop the etching ofILD 42. In accordance with some exemplary embodiments, ILD 42 comprisesphosphosilicate glass (PSG), borosilicate glass (BSG), boron-dopedphosphosilicate glass (BPSG), fluorine-doped silicate glass (FSG),tetraethyl orthosilicate (TEOS), or the like. ILD 42 may be formed usingspin coating, Flowable Chemical Vapor Deposition (FCVD), or the like. Inalternative embodiments of the present disclosure, ILD 42 is formedusing a deposition method such as PECVD, Low Pressure Chemical VaporDeposition (LPCVD), or the like.

As shown in FIG. 13A, contact etch stop layer 40 is formed over andcontacting top gate 24B and dielectric layer 26B. As also shown in FIG.13B, contact etch stop layer 40 also extends into opening 38 (FIG. 12),and extends on the sidewalls of the stacked layers 28A, 30A, 32A, 30C,32B, 30B, 28B, and 24B. Furthermore, contact etch stop layer 40 mayextend on and contacting the top surface of bottom gate 24A in someembodiments.

FIGS. 14A and 14B illustrate the formation of gate contact plugs 44(including 44A and 44B) and source/drain contact plugs 46. Therespective step is shown as step 226 in the process flow shown in FIG.17. FIG. 14A is obtained from the plane same as the plane of FIG. 13A,and FIG. 14B is obtained from the plane same as the plane of FIG. 13B.In accordance with some embodiments of the present disclosure, contactplugs 44 and 46 are formed of a conductive material selected fromtungsten, aluminum, copper, titanium, tantalum, titanium nitride,tantalum nitride, alloys therefore, and/or multi-layers thereof. Theformation of contact plugs 44 and 46 may include etching ILD 42 andcontact etch stop layer 40 to form openings, filling the conductivematerial(s) into the contact openings until the conductive materialfills the entireties of the contact openings, and performing aplanarization (such as CMP) to level the top surfaces of contact plugs44 and 46 with the top surface of ILD 42. As shown in FIG. 14A,source/drain contact plugs 46 are electrically connected to source/drainregions 36. As shown in FIGS. 14A and 14B, gate contact plugs 44A and44B are electrically connected to top gate 24B and bottom gate 24A,respectively. In subsequent steps, electrical connections 45 such asmetal lines and vias are formed to electrically interconnect gatecontact plugs 44A and 44B. Accordingly, top gate 24B and bottom gate 24Aare electrically shorted, and may be provided with the same gatevoltage. The formation of 2D TMD FET 50 is thus finished.

As shown in FIG. 14A, 2D TMD FET 50 has TMD layers 30A, 30B, and 30C asthe channels, wherein each of TMD layers 30A, 30B, and 30C is connectedbetween the source and drain regions 36, and TMD layers 30A, 30B, and30C are turned on or off at the same time by top gate 24B and bottomgate 24A. TMD layer 30B is mainly controlled by top gate 24B, althoughit is also controlled by bottom gate 24A. TMD layer 30A is mainlycontrolled by bottom gate 24A, although it is also controlled by topgate 24B. TMD layer 30C is controlled by both top gate 24B and bottomgate 24A.

FIG. 16 illustrates the 2D TMD FET 50 in accordance with alternativeembodiments. The materials and the formation methods of the componentsin these embodiments are essentially the same as the like components,which are denoted by like reference numerals in the embodiments shown inFIGS. 1 through 14B. In these embodiments, TMD layer 32C as in FIG. 14Ais not formed, and insulator 32, which is essentially the same as eitherone of insulator 32A and 32B in FIGS. 14A and 14B, is formed. Thedetails regarding the formation process and the materials of thecomponents shown in FIG. 16 may thus be found in the discussion of theembodiments shown in FIGS. 1 through 14B.

2D TMD FET 50 in FIG. 16 has TMD layers 30A and 30B as the channels,wherein each of TMD layers 30A and 30B is connected between source anddrain regions 36, and TMD layers 30A and 30B are turned on or off at thesame time by top gate 24B and bottom gate 24A. TMD layer 30B is mainlycontrolled by top gate 24B, although it is also controlled by bottomgate 24A. TMD layer 30A is mainly controlled by bottom gate 24A,although it is also controlled by top gate 24B.

The embodiments of the present disclosure have some advantageousfeatures. Experiment results indicated that when three layers of TMDlayers (such as 30A, 30B, and 30C in FIG. 14A) are formed in a sample 2DTMD FET, the drive current is 2.7 times the drive current of a 2D TMDFET with a single TMD layer. The sub-threshold swing of the 2D TMD FETis about 65.1, which is a light increase over the sub-threshold swing60.6 of the 2D TMD FET with a single TMD layer. When five layers of TMDlayers are formed in a sample 2D TMD FET, the drive current is 4.5 timesthe drive current of the 2D TMD FET with a single TMD layer. Thesub-threshold swing is only increased to about 72.2. Accordingly, byincreasing the number of TMD layers (which are separated by insulators),the drive current of the resulting 2D TMD FET may be significantlyincreased without causing too much increase in sub-threshold swing. Theon/off current ratio of the 2D TMD FET with a plurality of TMD layersseparated by insulators is also increased over the on/off current ratioof the 2D TMD FET with a thick TMD layer due to the improved control ofthe channel by the gate, which causes the effective mass of themono-layers to decrease. The leakage current (off current) of the 2D TMDFET in accordance with embodiments is also reduced.

In accordance with some embodiments of the present disclosure, a deviceincludes device includes a semiconductor substrate, a buried oxide overthe substrate, a first transition metal dichalcogenide layer over theburied oxide, an insulator over the first transition metaldichalcogenide layer, and a second transition metal dichalcogenide layerover the insulator. A gate dielectric is over the second transitionmetal dichalcogenide layer, and a gate is over the gate dielectric.

In accordance with alternative embodiments of the present disclosure, adevice includes a bottom gate, a first gate dielectric overlapping thebottom gate, a first transition metal dichalcogenide layer overlappingthe first gate dielectric, a first insulator overlapping the firsttransition metal dichalcogenide layer, a second transition metaldichalcogenide layer overlapping the first insulator, a second gatedielectric overlapping the second transition metal dichalcogenide layer,and a top gate overlapping the second gate dielectric. The bottom gateand the top gate are electrically interconnected, and a source regionand a drain region on opposite sides of the first and the secondtransition metal dichalcogenide layers.

In accordance with yet alternative embodiments of the presentdisclosure, a method includes forming a bottom gate over an insulationlayer, forming a first dielectric layer on opposite sides of the bottomgate, forming a first gate dielectric overlapping the bottom gate,forming a first transition metal dichalcogenide layer overlapping thefirst gate dielectric, forming a first insulator overlapping the firsttransition metal dichalcogenide layer, forming a second transition metaldichalcogenide layer overlapping the first insulator, forming a secondgate dielectric overlapping the second transition metal dichalcogenidelayer, and forming a top gate overlapping the second gate dielectric.The bottom gate and the top gate are electrically interconnected. Themethod further includes forming a second dielectric layer on oppositesides of the top gate, patterning the second dielectric layer, thesecond transition metal dichalcogenide layer, the first insulator, andthe first transition metal dichalcogenide layer to form source/drainopenings. The source/drain openings are filled to form a source regionand a drain region on opposite sides of the first and the secondtransition metal dichalcogenide layers.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A device comprising: a semiconductor substrate; aburied oxide over the substrate; a first transition metal dichalcogenidelayer over the buried oxide; a first insulator over the first transitionmetal dichalcogenide layer; a second transition metal dichalcogenidelayer over the first insulator; a first gate dielectric over the secondtransition metal dichalcogenide layer; and a first gate over the firstgate dielectric.
 2. The device of claim 1 further comprising: a secondgate dielectric overlapped by the first transition metal dichalcogenidelayer; and a second gate overlapped by the second gate dielectric,wherein the first gate and the second gate are electricallyinterconnected.
 3. The device of claim 1 further comprising a sourceregion and a drain region on opposite sides of and interconnected by thefirst and the second transition metal dichalcogenide layers.
 4. Thedevice of claim 1 further comprising: a second insulator overlapped bythe first transition metal dichalcogenide layer; and a third transitionmetal dichalcogenide layer overlapped by the second insulator.
 5. Thedevice of claim 1, wherein one of the first transition metaldichalcogenide layer and the second transition metal dichalcogenidelayer has a single-mono-layer structure.
 6. The device of claim 1,wherein the first transition metal dichalcogenide layer and the secondtransition metal dichalcogenide layer comprise a same transition metaland a same group VIA element.
 7. The device of claim 1, wherein thefirst transition metal dichalcogenide layer and the second transitionmetal dichalcogenide layer comprise different elements.
 8. The device ofclaim 1, wherein the first insulator has an effective oxide thicknesssmaller than about 1 nm.
 9. A device comprising: a bottom gate; a firstgate dielectric overlapping the bottom gate; a first transition metaldichalcogenide layer overlapping the first gate dielectric; a firstinsulator overlapping the first transition metal dichalcogenide layer; asecond transition metal dichalcogenide layer overlapping the firstinsulator; a second gate dielectric overlapping the second transitionmetal dichalcogenide layer; a top gate overlapping the second gatedielectric, wherein the bottom gate and the top gate are electricallyinterconnected; and a source region and a drain region on opposite sidesof the first and the second transition metal dichalcogenide layers. 10.The device of claim 9, wherein the first insulator is in physicalcontact with both the first transition metal dichalcogenide layer andthe second transition metal dichalcogenide layer.
 11. The device ofclaim 9 further comprising: a second insulator overlapping the secondtransition metal dichalcogenide layer; and a third transition metaldichalcogenide layer overlapping the second insulator, wherein the thirdtransition metal dichalcogenide layer is overlapped by the second gatedielectric.
 12. The device of claim 9, wherein each of the firsttransition metal dichalcogenide layer and the second transition metaldichalcogenide layer has fewer than about 5 mono-layers.
 13. The deviceof claim 9, wherein the first insulator has an effective oxide thicknesssmaller than about 1 nm.
 14. The device of claim 9, wherein each of thefirst gate dielectric and the second gate dielectric has an effectiveoxide thickness smaller than about 2 nm.
 15. The device of claim 9,wherein the first transition metal dichalcogenide layer and the secondtransition metal dichalcogenide layer have a same conductivity type. 16.A method comprising: forming a bottom gate over an insulation layer;forming a first dielectric layer on opposite sides of the bottom gate;forming a first gate dielectric overlapping the bottom gate; forming afirst transition metal dichalcogenide layer overlapping the first gatedielectric; forming a first insulator overlapping the first transitionmetal dichalcogenide layer; forming a second transition metaldichalcogenide layer overlapping the first insulator; forming a secondgate dielectric overlapping the second transition metal dichalcogenidelayer; forming a top gate overlapping the second gate dielectric,wherein the bottom gate and the top gate are electricallyinterconnected; forming a second dielectric layer on opposite sides ofthe top gate; patterning the second dielectric layer, the secondtransition metal dichalcogenide layer, the first insulator, and thefirst transition metal dichalcogenide layer to form source/drainopenings; and filling the source/drain openings to form a source regionand a drain region on opposite sides of the first and the secondtransition metal dichalcogenide layers.
 17. The method of claim 16further comprising forming electrical connections to electricallyconnect the top gate to the bottom gate.
 18. The method of claim 16further comprising: forming a contact etch stop layer over andcontacting the top gate and the bottom gate; forming an inter-layerdielectric over the contact etch stop layer; and forming a first contactplug and a second contact plug penetrating through the contact etch stoplayer and the inter-layer dielectric, wherein the first contact plug andthe second contact plug are electrically connected to the top gate andthe bottom gate, respectively.
 19. The method of claim 16, wherein thefirst transition metal dichalcogenide layer is formed using ChemicalVapor Deposition (CVD).
 20. The method of claim 16 further comprisingdoping the first transition metal dichalcogenide layer and the secondtransition metal dichalcogenide layer to have a same conductivity type.